p age:p2-p1 plastic-encapsulate transistors features high dc current gain :hfe=200(typ)vce=6v, ic=1ma high voltage:vceo=50v maximum ratings (ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current -continuous i c 0.1 a collector power dissipation p c 0.2 w junction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =100 a,i e =0 60 v collector-emitter breakdown voltage v ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =6v,i c =1ma 90 200 600 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.3 v base-emitter saturation voltage v be(sat) i c =100ma,i b =10ma 1 v transition frequency f t v ce =6v,i c =10ma 250 mhz classificationof h fe rank l4 l5 l6 l7 range 90 - 1 80 135 - 270 200 - 400 300 - 600 (npn) 1. base 2. emitter sot-23 3. collecto c1623 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
p age:p2-p2 plastic-encapsulate transistors typical characteristics c1623 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
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